Some electronic properties of thin film of polyethylene
Başlık çevirisi mevcut değil.
- Tez No: 400520
- Danışmanlar: PROF. CYRIL A. HOGART
- Tez Türü: Doktora
- Konular: Kimya Mühendisliği, Metalurji Mühendisliği, Chemical Engineering, Metallurgical Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 1977
- Dil: İngilizce
- Üniversite: Brunel University London
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Metalurji ve Malzeme Mühendisliği Teknolojileri Ana Bilim Dalı
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: 192
Özet
.
Özet (Çeviri)
The electrioal hehaviour of the thin films of metal-polyethylene-metal structures with polyethylene thicknesses in the range 900-4000 Awere studied.The current-voltage characteriatics of the evaporated polyethylene vere observed to be affected by the eleotrode material prior to electroforming. The space-charge-limited conduction mechanism was the dominant conduction mechanism when the top electrodes were copper. Thenormal Poole-Prenkel effect was observed in a blown polyethylene thin film of thickness 2500 A with copper top electrode. On the other hand, the anomalous Poole-Frenkel effect was observed to be the conduction mechanism in evaporated polyethylene thin films with aluminium electrodes. it was concluded that the evaporated copper atoms diffused into the evaporated polyethylene and acted as traps.The M-PE-M samples were subjected to electroforming processes for o polyethylene thicknesses less than 4000 A. The minimum temperature for electroforming was -29 C and the maximum pressure was 0.4 torr. The degree of forming was less in both conditions compared with the resultsat normal temperatures and under high vacua. The forming voltage wasdecreased by increasing the temperature.The differential negative resistance, thermal-voltage and voltage-memories and electron emission effects were observed 'in the electroformed M-PE-M samples and were similar to the effects observed with electro-formed inorganic dielectrics.The differential negative resistance was polarity independent and usually observed with a peak current at maximum voltages between 3 to 6 volts. The differential negative resistance -was also observed when alternating voltage was used up to 10 Hz. The peak current decreased with increasing frequency.Although the peak current was observed for the first run of de bias voltages at temperatures lower than about -100 C, it disappeared for decreasing and consecutively increasing the bias voltages. This high-impedance characteristic of the device shows the thermal-voltage memory state which can be fully erased at room temperature on application of a bias voltage exceeding the threshold voltage, V^. However, the partial erasure of the thermal-voltage memory took place at minimum temperature of -26 C. The voltage-memory, on the other hand, was induced by turning off the power supply at bias voltages above maximum voltage at room temperature. it is a stable memory state and is erased at bias voltages exceeding V?.The eleetron emission was also observed in the eleetroformed M-PE-M samples. The transmission coefficient which is the ratio of the emission to the circulating current for a given bias voltage inereased when a discontinuous top eleetrode was used specially at lower bias voltages.The potential distribution in the M-PE-M-PE-M triode samples were also studied. it was observed that the ourrent-voltage behaviour of the sample was controlled by the high-field layer. The shift of the high-field from one layer to the other was found to be the result of electrical changes in the previous high-field layer.The observed effects in the eleetroformed samples were explained in tenas of the filamentary model and of the theory of Ealph and an Woodcock .
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