X- to W-band phased arrays and wafer-scale transmitters using silicon integrated circuits
Başlık çevirisi mevcut değil.
- Tez No: 400934
- Danışmanlar: PROF. GABRIEL M. REBEIZ
- Tez Türü: Doktora
- Konular: Elektrik ve Elektronik Mühendisliği, Electrical and Electronics Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 2011
- Dil: İngilizce
- Üniversite: University of California San Diego
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Belirtilmemiş.
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: 120
Özet
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Özet (Çeviri)
The thesis presents X- to W-band arrays implemented in silicon technologies for different phased-array applications. An 8-20 GHz two-channel dual down-conversion receiver with selectable IF for interference mitigation is presented for digital beamforming applications. The receiver is fabricated using a 0.18-m SiGe BiCMOS process and results in a channel gain (I and Q paths) of 46-47 dB at 11-15 GHz and > 36 dB at 8-20 GHz with an instantaneous bandwidth of 150 MHz. The measured NF is < 4.1 dB (3.1 dB at 15-16 GHz). The measured OP1dB is -10 dBm and the input P1dB is -56 to -40 dBm at 15 GHz depending on the gain, which is sufficient for satellite applications. The on-chip channel-to-channel coupling is < -48 dB. The measured EVM is < 3% for a 1 Msps QPSK modulation at 8-20 GHz, and < 1.8% for a 0.1, 1 and 10 Msps QPSK, 16QAM and 64QAM modulations at 15 GHz. The chip has ESD protection on the RF and DC pads, consumes 70 mA per channel from a 3.0 V power supply and is 2.62.2 mm2, xvi including all pads. A 15 GHz 8-element phased array with a NF < 3.9 dB is also demonstrated with multiple simultaneous beam performance using digital beamforming. In another project, a silicon-based 8-element phased array based on an All-RF beamforming topology is integrated together with the antennas and digital control circuitry on a single Teflon board. The chip-on-board package, together with 8 X/Ku-band RF inputs and one RF output in a 2.22.5 mm2 area, and the appropriate grounding and Vcc connections, are modeled using a 3-D EM solver. The design results in a low coupling between the different RF ports, and ensures stability even with a channel gain of 20 dB at 12 GHz. The measured patterns show a near-ideal performance up to a scan angle of 60 with an instantaneous scanning bandwidth of 11.4-12.6 GHz (limited by non true-time delay connections between the antennas and the chip). Temperature tests indicate that the silicon chip maintains excellent phase stability and rms phase error up to 100C. Finally, the first mm-wave wafer-scale silicon power amplifier array is implemented using 0.13 m BiCMOS technology. The power combining is done in the free-space using the high efficiency on-chip antennas. First, a W-band SiGe power amplifier is designed and fabricated together with a high-efficiency on-chip microstrip antenna. The power amplifier consumes 120 mA from a 1.7 V supply and the antenna/amplifier results in an effective radiated power (EIRP=PtGt) > 10 dBm from 88 to 98 GHz, with a peak of 14.6 dBm at 92 GHz. Then, a 33 power amplifier array is demonstrated with an equivalent isotropic radiated power (EIRP) of 33-35 dBm at 90-98 GHz. This results in a total on-chip power of 21-23 dBm, and a total radiated power of 17.5-19.5 dBm. The our knowledge, this is the highest power (and EIRP) achieved from a single silicon chip at millimeter-waves. The measured patterns of the array show single-mode operation and 100% free-space power-combining efficiency with a 3-dB beamwidth of 28 and a directivity of 15.5 dB (gain of 12 dB). The total power-combining efficiency including the antenna losses is 4510%. It is shown that by using this technique high power (1-2 W) millimeter-wave transmitters with phased array capabilities can be realized in silicon technologies which will be compatible with best III-V solutions. The application areas are in millimeter-wave transmitters and wafer-scale phased arrays.
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