Anahtarlı-Kapasitör tekniği ile IIR/FIR ve N-yollu filtrelerin gerçeklenmesi
Realization of IIR/FIR and N-Path filters using switched-capacitor techniques
- Tez No: 22076
- Danışmanlar: PROF. DR. FUAT ANDAY
- Tez Türü: Yüksek Lisans
- Konular: Elektrik ve Elektronik Mühendisliği, Electrical and Electronics Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 1992
- Dil: Türkçe
- Üniversite: İstanbul Teknik Üniversitesi
- Enstitü: Fen Bilimleri Enstitüsü
- Ana Bilim Dalı: Belirtilmemiş.
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: 78
Özet
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Özet (Çeviri)
capacitances. Now, while the value of a MOS capacitor can only be controlled with an accuracy of 5-10 percent, the ratio of two capacitances can be made accurate to within a fraction of 1 percent. Hence, an accuracy of 0.1-0.5 percent is achievable for the time constant. This is because most error sources affect capacitors on the same chip (especially those located close to each other) the same way. This tracking behavior extends to variations with temperature and aging. The area requirement for resistors is also drasti cally reduced by using the equivalent branches. For the value R=10 Q quoted above, assuming a 100kHz clock fre quency, by (2) a switched capacitor of value C=lpF is required. The area occupied is thus about 3mil2 (the area of the switches is negligible) rather than 1600mil2 a reduction by a factor of 500 1 Shortly monolithic switched-capacitor (SO circuits [33 in MOS technology have been widely applied to analog signal processing with a good accuracy and less chip area. Most SC circuits are based on the SC integrator, altought it has certain limits in realizing analog func tions C4,53. Recently, SC dif f eretiators have been developed and various applications have been explored [63 It is found that many circuits which are not realizable in conventional SC integrators can be implemented by SC differentiators. With both SC differentiators and integrators, therefore, the application field of SC cir cuits can be extended and their design versatility can be enhanced. Recently, monolithic inverting and noninverting SC differentiators have been proposed and their noise per formance has been analyzed and investigated. It is shown that the SC differentiators have simple structures and are stray insensitive. In addition, they have a good noise performance and is compatible in both fabri cation technology and operation with conventional SC integrators. It is expected that the proposed SC differentiator can be applied to design useful SC cir cuits and systems. There are two interesting applications of SC cir cuits. One is the realization of discrete-time trans fer functions in both infinite-impulse-response (IIR) and f inite-irapulse-response (FIR) forms. The other is the realization of multiplexed filter banks and N-path filters..vii-SUMMARY REALIZATION OF IIR/FIR AND N-PATH FILTERS USING SWITCHED-CAPACITOR TECHNIQUES The practical use of switched- capacitor integrated circuits began on a major scale about fifteen years ago. During this interval, many commercial integrated cir cuits utilizing switched- capacitor (SO techniques have been fabricated and marketed. High- quality analog filters had been historically realized as passive LCR circuits. Since inductors are physically large, electrically lossy and noisy, and unsuitable for miniaturization, an effort to replace them by active elements had begun in the 1960» s. The resulting circuits were the active- RC filters which gained wide acceptance over the past 30 years. To reduce their sizes, they are often realized in a hybrid construction, with monolithic op- amps and chip capaci tors soldered on a board containing thick- film resistors. The next step in miniaturization was to realize fully integrated filters CIS. Since the MOS technology offers high- quality capacitors, low leakage charge stor age, offset- free switches, and nondestructive charge sensing, it is usually preferred to bipolar technology for filtering applications. The straightforward inte gration of an active- RC filter, however, leads to difficulties. Since for an oxide thickness of 700a a lpF capacitor requires about 3mil2 (or about £000/umz) chip area, MOS capacitors aire seldom made larger than about lOOpF. Since integrated filters are commonly used in the voice- frequency (O- to 4kHz) range, they require time constants of the order RC«slO~*s. Even for a large capacitor (say, C=10pF), this requires a resistor of order 10 Ci. Such a resistor, made by using a polysili- con line or diffusion region, occupies an area around 1600milz*10°jum2, or nearly 10 percent of the average chip area of an analog MOS integrated circuit. In addi tion, MOS resistors tend to be nonlinear. -v-SUMMARY REALIZATION OF IIR/FIR AND N-PATH FILTERS USING SWITCHED-CAPACITOR TECHNIQUES The practical use of switched- capacitor integrated circuits began on a major scale about fifteen years ago. During this interval, many commercial integrated cir cuits utilizing switched- capacitor (SO techniques have been fabricated and marketed. High- quality analog filters had been historically realized as passive LCR circuits. Since inductors are physically large, electrically lossy and noisy, and unsuitable for miniaturization, an effort to replace them by active elements had begun in the 1960» s. The resulting circuits were the active- RC filters which gained wide acceptance over the past 30 years. To reduce their sizes, they are often realized in a hybrid construction, with monolithic op- amps and chip capaci tors soldered on a board containing thick- film resistors. The next step in miniaturization was to realize fully integrated filters CIS. Since the MOS technology offers high- quality capacitors, low leakage charge stor age, offset- free switches, and nondestructive charge sensing, it is usually preferred to bipolar technology for filtering applications. The straightforward inte gration of an active- RC filter, however, leads to difficulties. Since for an oxide thickness of 700a a lpF capacitor requires about 3mil2 (or about £000/umz) chip area, MOS capacitors aire seldom made larger than about lOOpF. Since integrated filters are commonly used in the voice- frequency (O- to 4kHz) range, they require time constants of the order RC«slO~*s. Even for a large capacitor (say, C=10pF), this requires a resistor of order 10 Ci. Such a resistor, made by using a polysili- con line or diffusion region, occupies an area around 1600milz*10°jum2, or nearly 10 percent of the average chip area of an analog MOS integrated circuit. In addi tion, MOS resistors tend to be nonlinear. -v-transfer function. Then the z- domain transfer function of the circuit is generated and compared to the speci fied one. Finally, capacitor values of the SC circuit can be determined to satisfy the specified z-dornain transfer function. It is difficult, however to use the proposed SC structure to implement a high- order ZIR filter £) ESD. The second method proposed by Davis and Smith £31 relies on the synthetic division. By using this method, SC circuits can be constructed efficiently and direct ly from z- domain specifications. This method is a good design skill for SC circuits because the design proce dure is clear and easy. This method is also applicable for SC differentiators. Two canonical structures are proposed for the realization of IIR transfer functions using SC differentiators and the synthetic division technique. In the proposed realization method, the differentiator type of the element or Kz"1) to H
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