Analysis and modeling of arsenic activation and deactivation in silicon
Başlık çevirisi mevcut değil.
- Tez No: 401510
- Danışmanlar: DR. MARK E. LAW
- Tez Türü: Doktora
- Konular: Elektrik ve Elektronik Mühendisliği, Electrical and Electronics Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 1997
- Dil: İngilizce
- Üniversite: University of Florida
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Belirtilmemiş.
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: 141
Özet
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Özet (Çeviri)
Heavily doped layers are one of the basic components of semiconductor device technology. As device dimensions shrink, higher electrically active dopant concentrations are required to fabricate devices with desirable properties. However, clustering and precipitation limit the obtainable active dopant concentration. Because of its high solubility and low diffusivity, arsenic is the most commonly used dopant for the fabrication of n+ layers in silicon. The electrical activation and deactivation process of arsenic needs to be understood to assess its effects on the electrical properties of devices. The focus of this thesis is analysis and modeling of phenomena related to electrical activation and deactivation of arsenic. The properties of the dislocation loops formed during arsenic deactivation were investigated with transmission electron microscopy. The loops are confined inside the arsenic layer, suggesting a strong link between loop formation and inactive arsenic. The reduction in buried boron layer diffusivity can be explained by the increase in the number of atoms bound by the loops. Transient enhanced diffusion after high dose arsenic implantation was quantified using buried boron layers. Dislocation loops were also studied in these samples. The enhancement in boron diffusivity decreases at higher arsenic doses. The effect of arsenic activation on vacancy population was investigated with antimony marker layers. There is not any observable vacancy injection during arsenic activation in the presence of dislocation loops. Small enhancements in antimony diffusion were observed after the loops had dissolved. An arsenic deactivation model that takes into account the size distribution of inactive arsenic structures was developed in FLOOPS. The model successfully reproduces the initial rapid deactivation of arsenic and the slow deactivation after the first few minutes. Various numerical methods were evaluated for the numerical solution of the rate equations that describe the size evolution of extended defects. The logarithmic rediscretization method was found to be the most accurate and stable technique for reducing the number of rate equations. The inclusion of the interactions between the arsenic-vacancy complexes, interstitials and dislocation loops led to a more general and physical arsenic deactivation model which can account for several experimental trends.
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