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Nanostructuring using metal assisted etching

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  1. Tez No: 401865
  2. Yazar: MEHMET UMUT KÜÇÜKBAYRAK
  3. Danışmanlar: DR. FIRAT GÜDER
  4. Tez Türü: Yüksek Lisans
  5. Konular: Biyomühendislik, Biyoteknoloji, Kimya Mühendisliği, Bioengineering, Biotechnology, Chemical Engineering
  6. Anahtar Kelimeler: Belirtilmemiş.
  7. Yıl: 2013
  8. Dil: İngilizce
  9. Üniversite: Albert-Ludwigs-Universität Freiburg im Breisgau
  10. Enstitü: Yurtdışı Enstitü
  11. Ana Bilim Dalı: Belirtilmemiş.
  12. Bilim Dalı: Belirtilmemiş.
  13. Sayfa Sayısı: 98

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Özet (Çeviri)

Continuous development in the field of semiconductors draws more attention onto the nanowires to fulfill the different expectations of the industry with their fascinating properties. They are considered to be the building blocks of the future technology in diverse application fields such as electronics, optoelectronics, biological and chemical sensors and renewable energy. For the fabrication of such devices, costs are one of the big concerns in the state of the art. Among different developed methods for nanowire fabrication, metal assisted chemical etching is a very promising one owing its low-cost and simplicity. It is an electroless method to etch silicon by immersing a metal modified silicon substrate in a solution containing hydrofluoric acid and oxidizing agent, where metal particles act as catalyst. This thesis investigates the use metal assisted chemical etching in nanostructuring, namely fabrication of nanowires. It covers two different approaches in two parts for different type of nanowire fabrication. First part is the fabrication of atomic layer deposition grown metal-oxide nanowire and nanotube arrays. This is a completely novel approach. Main use of metal assisted chemical etching in literature deals with the fabrication of silicon nanowires on a substrate while this approach tries to implement metal assisted chemical etching as an alternative to bosch process to bore deep trenches into silicon for high aspect ratio metal-oxide nanowire fabrication. In this respect, required process steps were defined and developed for the fabrication including near field phase shift lithography, electroless metal deposition, chemical mechanical polishing and inductively coupled plasma reactive ion etching. Eventually, we were able to prove the feasibility of the concept. Second part comprises the use of metal assisted etching in widely known way for silicon nanowire array fabrication. In this regard, we optimized different process parameters such as metal assisted etching solution content, metal catalyst thickness. Finally, electrical properties of the fabricated single nanowires measured with four point probe measurement on a stage fabricated by laser pattern generator. Aim of these measurements was to contribute to the applications of the nanowires, especially in the field of solar energy conversion where metal assisted etched silicon nanowires are a potential architecture.

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