CMOS transformer-based doherty power amplifiers
Başlık çevirisi mevcut değil.
- Tez No: 403334
- Danışmanlar: Prof. Dr. PATRICK REYNAERT
- Tez Türü: Doktora
- Konular: Elektrik ve Elektronik Mühendisliği, Electrical and Electronics Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 2014
- Dil: İngilizce
- Üniversite: Katholieke Universiteit Leuven (Catholic University of Leuven)
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Belirtilmemiş.
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: 197
Özet
Özet yok.
Özet (Çeviri)
The power amplifiers needed for smart phones, tables and laptops have to support very high data rate communication with very low power consumption. Doherty technique is a well known technique to minimize the power consumption of power amplifiers for amplitude modulated communication systems. However, this topology is not suitable for low cost, highly integrated power amplifiers. In this research, a novel power amplifier topology is proposed for complete CMOS integration. This topology mimics the Doherty operation using fully integrated series combining transformers. Modern wireless communication devices requires highly flexible output power levels depending on the distance to base stations. In this research several small amplifiers are combined using a novel power combiner to achieve high output power levels. In addition, the power amplifier can be reconfigured by adjusting the number of combined amplifiers. Therefore, the amplifier ensures high efficiency for a wide output power range. In addition, linearity of the overall amplifier is improved by combining several amplifiers with different distortion characteristics. The fundamental challenge in the CMOS integration of the Doherty topology was the design of low loss power combiner on cost silicon substrate. In this research, an asymmetrical series combiner transformer is proposed to enable Doherty operation with low loss. The transformer satisfies the required load modulation to achieve Doherty look-a-like operation, demonstrates impedance matching behavior such that no additional impedance matching network is required and acts as a balanced to unbalanced converter that allows differential amplifiers. After realizing highly efficient Doherty operation in bulk CMOS technology, the research is focused on further improving the flexibility of the amplifier. The conventional Doherty topology demonstrates efficiency enhancement for a 6 dB power range. In this research, a novel 4-way Doherty topology is proposed to extend the efficiency enhancement range up to 12 dB. The power amplifier utilizes dual power mode operation to adapt the amplifier depending on the varying environment. Finally, the proposed Doherty topology is modified for mm-wave operation. The emerging mm-wave communication systems also demands highly linear and efficient power amplifiers. The proposed transformerbased Doherty can be used to replace the conventional linear amplifiers in themm-wave transmitters to increase energy efficiency. In this research five power amplifier chips are designed, fabricated and measured: Two of the power amplifiers are designed for 2.4 GHzWLAN application. The uneven DohertyWLAN PA that is fabricated in 90 nm CMOS technology satisfies the stringent EVMand spectralmask requirements of theWLAN standard at 20.2 dBm output power level with a PAE of 24.7 Then dual-mode Doherty PA is fabricated for LTE systems in 40 nm CMOS. This PA satisfies the stringent EVMand spectral mask requirements of the LTE standard at 23.4 dBm output power with a PAE of 23.3 Finally, two power amplifier chips are fabricated to demonstrate the proposed mmwave Doherty topology. The E-band Doherty power amplifier is fabricated in 40 nm CMOS technology and achieves a peak output power of 21 dBm with a PAE of 13.6% at 72 GHz. The 1dB compression point of the amplifier is as high as 19.2 dBm and the PAE at 6 dB back-off is 7%. These results proves the linearization and back-off efficiency enhancement behavior of the proposed mm-wave Doherty topology. To sum up, the proposed transformer-based Doherty topology is very attractive for modern wireless standards such as WiFi and LTE as well as mm-wave applications thanks to its wide bandwidth, linearization and back-off efficiency enhancement characteristics. The fabricated power amplifiers improve state of the art in CMOS integrated power amplifiers.
Benzer Tezler
- A Microprocessor based over current relay
Başlık çevirisi yok
M.OKTAY ELDEM
Yüksek Lisans
İngilizce
1988
Elektrik ve Elektronik MühendisliğiOrta Doğu Teknik ÜniversitesiDOÇ. DR. F. RÜYAL ERGÜL
- Design and production of benchtop x-ray imaging system
Masaüstü x-ışını görüntüleme sisteminin dizaynı ve üretimi
MEHMET ERHAN EMİRHAN
Doktora
İngilizce
2016
Fizik ve Fizik Mühendisliğiİstanbul Teknik ÜniversitesiFizik Mühendisliği Ana Bilim Dalı
PROF. DR. CENAP ŞAHABETTİN ÖZBEN
- Modern haberleşme sistemlerinde kullanılan sıralı anten dizileri için minyatür faz kaydırma devrelerinin tasarımı
The design of prototype digital phase shifter circuits for consequent antenna series used in modern communication systems
ERCAN ATASOY
Doktora
Türkçe
2017
Elektrik ve Elektronik Mühendisliğiİstanbul ÜniversitesiElektrik-Elektronik Mühendisliği Ana Bilim Dalı
PROF. DR. BEKİR SIDDIK BİNBOĞA YARMAN
- Nanocrystal silicon based visible light emitting pin diodes
Nanokristal silisyum tabanlı görünür ışık yayan pin diyotlar
MUSTAFA ANUTGAN
Doktora
İngilizce
2010
Elektrik ve Elektronik MühendisliğiOrta Doğu Teknik ÜniversitesiFizik Bölümü
PROF. DR. BAYRAM KATIRCIOĞLU
- Characterization and modeling of negative-biastemperature instability in 40 NM CMOS technologythrough long short-term memory (LSTM) networks
Uzun kısa-süreli bellek ağlarıyla (LSTM)40 NM CMOS teknolojisinde negatif-kutuplamasıcaklık kararsızlığının karakterizasyonu ve modellenmesi
FİKRET BAŞAR GENCER
Yüksek Lisans
İngilizce
2023
Bilim ve Teknolojiİstanbul Teknik ÜniversitesiElektronik ve Haberleşme Mühendisliği Ana Bilim Dalı
DOÇ. DR. MUSTAFA BERKE YELTEN