Fabrication and characterization of semiconductor core optical fibers for mid-infrared transmission
Başlık çevirisi mevcut değil.
- Tez No: 598584
- Danışmanlar: PROF. SOUMENDRA NATH BASU
- Tez Türü: Doktora
- Konular: Fizik ve Fizik Mühendisliği, Physics and Physics Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 2017
- Dil: İngilizce
- Üniversite: Boston University
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Belirtilmemiş.
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: 125
Özet
Özet yok.
Özet (Çeviri)
Transmission in the mid-infrared (2-15 m) spectrum has many applications, in- cluding biomedical surgery, chemical detection, and countermeasures in defense sys- tems, among others. This highlights the necessity of a suitable ber for the mid- infrared (mid-IR) spectral range. Although uoride and chalcogenide glasses have shown promise of relatively low transmission losses, they are prone to devitri caion at room temperature leading to performance degradation. Semiconductors, such as germanium and silicon have low theoretical losses in the mid-IR spectral range, and are stable at room temperature, making semiconductor-core bers worthy of explo- ration for mid-IR transmission. In this study, germanium-core, borosilicate glass-cladded, silicon-core silica-cladded and silicon-germanium-core silica-cladded bers were drawn in laboratory-made mini draw towers and rod in tube method at a relatively low temperature of 1000C for borosilicate glass drawing and 1760C for silica drawing. 3 mm outer diameter core drilled germanium rods were placed in borosilicate glass tubes as preforms of germanium bers, 3 mm outer diameter core drilled silicon rods were placed in silica tubes as preforms of silicon bers, and 1.9 mm outer diameter core drilled germa- nium rods and 2 mm inner diameter, 3 mm outer diameter core drilled silicon tubes were placed concentrically in silica tubes as preforms of silicon-germanium alloy bers. The core/cladding area ratio was controlled by adding concentric borosilicate/silica tubes to increase the preform diameter. Depending on the drawing speed and initial core/cladding diameter ratio, bers with core diameters of 10-200 m with cladding diameters of 130-500 m, as well as canes with core diameters of 300-350 m and cladding diameters of 1.3-1.4 mm were drawn. The drawn bers were characterization by scanning/transmission electron mi- croscopy (S/TEM), energy dispersive x-ray spectroscopy (EDX), x-ray di raction (XRD) and electron backscatter di raction (EBSD). It was found that there was minimal di usion of oxygen and silicon from the cladding to the core in the Ge-core bers. In the Si-core and Si-Ge alloy-core bers, around 3 at % oxygen were found in the core, presumably due to enhanced di usion at the higher drawing tempera- ture of the silica-clad bers. Optical characterization of the Ge canes, carried out using Fourier transform infrared spectroscopy (FTIR) in the 1.3-16 m wavelength range, showed similar transmission characteristics, albeit with increased losses, over the entire wavelength range as the core drilled unprocessed germanium rod, even though the germanium core had undergone melting and re-solidi cation during the fabrication process. The transmission losses in the bers were measured using two quantum cascade lasers, and were found to average 5.1 dB/cm for Ge-core bers and 12 dB/cm for Si-core bers in the 5.75-6.30 m range. Transmission loss of Si-Ge alloy bers was found to be 28 dB/cm at 6.1 m. The higher losses of Si-Ge bers can be attributed to compositional uctuation in the core, due to the rapid cooling rate during ber drawing. High temperature annealing of the bers following by slow cooling homogenized the ber core, but also introduced cracks, which did not reduce the transmission losses. Non-linear properties of Ge-core bers and canes were in- vestigated using femtosecond pump-probe spectroscopy. Unprocessed 3 mm diameter rods exhibited the same detuning oscillations as 770 and 358 m Ge-core canes and a 132 m Ge-core ber, indicating that the non-liner properties of the semiconductor cores were preserved during processing.
Benzer Tezler
- InP Quantum Dot based Light-emitting and Neuro-stimulating Optoelectronic Devices
InP kuantum nokta tabanlı ışık yayıcı ve sinir uyarıcı optoelektronik aygıtlar
ONURALP KARATÜM
Yüksek Lisans
İngilizce
2019
Elektrik ve Elektronik MühendisliğiKoç ÜniversitesiElektrik-Elektronik Mühendisliği Ana Bilim Dalı
DR. ÖĞR. ÜYESİ SEDAT NİZAMOĞLU
- Sıvı kristal ve PCBM içeren organik alan etkili transistör (OFET) üretimi ve karakterizasyonu
Fabrication and characterization of the organic field effect transistor (OFET) containing liquid crystal and PCBM
ŞULE ZEYNEP KİP
Yüksek Lisans
Türkçe
2024
Fizik ve Fizik MühendisliğiDüzce ÜniversitesiFizik Ana Bilim Dalı
DOÇ. DR. AHMET DEMİR
- Novel ultraviolet scintillators based on semiconductor quantum dot emitters for significantly enhanced photodetection and photovoltaics
Morötesinde önemli ölçüde fotoalgılama ve fotovoltaik iyileştirmesi için yarıiletken kuvantum nokta ışıyıcıları temelli yenilikçi sintilatörler
EVREN MUTLUGÜN
Yüksek Lisans
İngilizce
2007
Elektrik ve Elektronik Mühendisliğiİhsan Doğramacı Bilkent ÜniversitesiFizik Ana Bilim Dalı
Y.DOÇ.DR. HİLMİ VOLKAN DEMİR
- Fabrication and characterization of semiconductor double quantum well diode lasers
Çift kuvantum kuyulu yarıiletken lazerlerinin yapımı ve incelenmesi
BÜLENT EROL SAĞOL
Yüksek Lisans
İngilizce
1998
Fizik ve Fizik Mühendisliğiİhsan Doğramacı Bilkent ÜniversitesiFizik Ana Bilim Dalı
YRD. DOÇ. DR. ALİ SERPENGÜZEL
- Yarı iletken metal oksit nanoyapıların üretimi, karakterizasyonu ve ters hibrit güneş piline uygulamaları
Fabrication and characterization of semiconductor metal oxide nano structures and inverted type hybrid solar cell applications
ARİF KÖSEMEN
Doktora
Türkçe
2016
Elektrik ve Elektronik MühendisliğiGebze Teknik ÜniversitesiFizik Ana Bilim Dalı
PROF. DR. YUSUF YERLİ