Synthesis, deposition and characterization of ferroelectric films for electrooptic devices
Başlık çevirisi mevcut değil.
- Tez No: 400338
- Danışmanlar: PROF. SADIK C. ESENER
- Tez Türü: Doktora
- Konular: Metalurji Mühendisliği, Metallurgical Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 1997
- Dil: İngilizce
- Üniversite: University of California San Diego
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Malzeme Bilimi ve Mühendisliği Ana Bilim Dalı
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: 221
Özet
Özet yok.
Özet (Çeviri)
The use of integrable ferroelectric electro-optic thin films is a revolutionary approachin the development of high-speed, low-voltage and high-contrast ratio integrated electroopticspatial light modulators (SLM) for free-space optoelectronic interconnects. Thinfilms offer improved performance over bulk ferroelectric (FE) materials because of theirlower modulator capacitance and operation at high speeds with low switching energies.Integration of ferroelectric thin films with silicon technology will also impact both theuncooled infrared sensor and dynamic and nonvolatile memory technologies.Ferroelectrics such as lead lanthanum zirconate titanate (PLZT) and potassium tantalateniobate (KTN) present great potential for SLMs due to their large electro-optic (EO)effect in the bulk form. The development of thin-film SLMs require electro-optic films ofhigh optical quality with good dielectric and EO properties.High quality thin films of PLZT and KTN were deposited using RF magnetronsputtering on r-plane sapphire substrates which offer integration capability withsemiconductor devices. PLZT films with extremely large peak dielectric constant, 2800 atthe Curie temperature of 180°C, were achieved with remarkably low dissipation lossfactor < 0.04. The dielectric frequency dispersion was determined to be very small up toI Mhz. Also, the absorption of the light in the films was very low. A giant effectivequadratic electrooptic effect was demonstrated in PLZT films. These results represent ahuge leap forward for the FE-SLM technology with respect to the goal of fully integratedthin film electro optic light modulators.Microstructural development and phase transformation kinetics in PLZT films werealso analyzed for the first time and are presented here. Energy required for the formationof desirable perovskite phase was determined to be 322 kJ/mol. Single-phase PLZT filmswith larger average grain size showed higher dielectric constants and better EO propertiesas compared to films with smaller grain size. Furthermore, a method of sol-gel synthesisof KTN with reproducible characteristics was developed for fabrication of both thin filmsand homogeneous sputtering targets. Also for the first time, a stoichiometric KTN targetwas consolidated to high density by hot-isostatic pressing developed during this study.
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