Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors
Başlık çevirisi mevcut değil.
- Tez No: 401058
- Danışmanlar: PROF. SAMUEL GRAHAM
- Tez Türü: Doktora
- Konular: Makine Mühendisliği, Mechanical Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 2013
- Dil: İngilizce
- Üniversite: Georgia Institute of Technology
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Belirtilmemiş.
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: 150
Özet
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Özet (Çeviri)
There has been growing interest in AlGaN/GaN Heterojunction Field E ect Transistors (HFETs) that can operate in high power and high frequency applications. However, due to its large phononic band gap and the Frohlich interaction of electrons with high energy polar optical phonons, intense heating and a phonon bottleneck occurs that impacts the ability to dissipate heat locally near the transistor's gate. Thus, an intense hotspot occurs which can impact the overall device reliability. While numerous studies have modeled AlGaN/GaN transistors to estimate the hotspot temperature, little attention has been given to the phonon transport physics which occurs in the devices. In general, these models fail to capture ballistic-di usive phonon conduction which can result in an elevated temperature rise that is not predicted by other models used to analyze AlGaN/GaN HEMTs. Such models will provide greater insight into the thermal transport process and thermal response of the self heating of these technologically important devices. To build a thermal model that will capture these ballistic e ects, rst the methods that can be used for phonon transport modeling were presented. Later, the appropriate method was picked by comparing the performance of two common methods using a gray approximation in ballistic to di usive regimes. After the method was chosen for the ballistic-di usive thermal simulations, a multiscale model was suggested. This multiscale model allows modeling geometries other than the die while still including the ballistic e ects at the hotspot with reasonable computational cost. In the meantime, a non-gray approach that included the e ects of the di erent relaxation times and the thermal conductivities of phonon modes in the crystal was introduced. Later, using this multiscale electro-thermal model, device simulations at di erent biasing conditions were performed on two- nger HFETs grown on SiC substrates and mounted on RF packages. To obtain the Joule heating distribution that might have an impact on device temperature, electrical simulations were performed using hydrodynamic and Monte Carlo simulations. After the electrical Joule heating distribution was obtained, it was used in gray and non-gray multiscale thermal simulations and the temperature distribution within the device and the hotspot was obtained. With this thesis, an electro-thermal approach to investigate the ballistic-di usive nature of the heating in AlGaN/GaN HFETs is presented as well as the impact of electrical bias conditions on the heat generation distribution. This e ort is the rst to employ such a scheme for the analysis of AlGaN/GaN devices for temperature modeling. Finally, this method allowed us to capture the deviation from purely di usive transport. In general, this deviation lasted over 5 to 10 m around the device and the temperature deviation ranged from 5K to 50K at the maximum point depending on the mean free path of phonons, power density, and the biasing condition.
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