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High performance electronics based on aligned arrays of single walled carbon nanotubes

Başlık çevirisi mevcut değil.

  1. Tez No: 401549
  2. Yazar: COŞKUN KOCABAŞ
  3. Danışmanlar: PROF. JOHN A. ROGERS
  4. Tez Türü: Doktora
  5. Konular: Fizik ve Fizik Mühendisliği, Physics and Physics Engineering
  6. Anahtar Kelimeler: Belirtilmemiş.
  7. Yıl: 2007
  8. Dil: İngilizce
  9. Üniversite: University of Illinois at Urbana-Champaign
  10. Enstitü: Yurtdışı Enstitü
  11. Ana Bilim Dalı: Belirtilmemiş.
  12. Bilim Dalı: Belirtilmemiş.
  13. Sayfa Sayısı: 173

Özet

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Özet (Çeviri)

This dissertation describes a new approach for generating large area homogenous parallel array of single walled carbon nanotubes. The approach uses guided growth, by chemical vapor deposition (CVD), of SWNTs on single crystal quartz substrates. The anisotropic interaction associated with lattice structure of the quartz between SWNT and quartz surface guides SWNT during the deposition process. We have optimized CVD conditions that can produce arrays of individual single walled carbon nanotubes in horizontal configurations with perfect linear shapes, to within experimental uncertainties, and with levels of alignment >99.9%. We took the method one step further by printing these SWNT arrays on unusual substrate such as plastic. Using the developed printing technique, we can fabricate multilayer superstructures of single-walled carbon nanotubes (SWNTs) on a wide range of substrates. In order to understand charge transport through SWNT networks, we studied the scaling behaviours SWNT transistors by systematically varying degrees of alignment and coverage in transistors with a range of channel lengths and orientations perpendicular and parallel to the direction of alignment. We have modelled our experimental results using a first principles stick-percolation based transport model which provides a simple framework to interpret the sometimes counter-intuitive transport parameters measured in these devices. We have used dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin film semiconductor suitable for integration into transistors and other classes of electronic devices. These types of devices show excellent electric performance with mobilities and scaled transconductances approaching ~2,000 cm2 V-1 s-1 and ~3,000 S m-1, respectively. MOS and CMOS logic gates and mechanically flexible transistors on plastic were also demonstrated. Finally we have studied the high frequency performance of transistors that use aligned SWNT arrays. For the first time we have observed power gain from SWNT transistors. This achievement allows us to build all of the key functions of analog electronics, including resonant antennas, fixed RF amplifiers, RF mixers and audio amplifiers. Combining these components we have built the first carbon nanotube radio. These results represent important first steps to practical implementation of SWNTs in high speed analog circuits.

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