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Technology and optimization of PECVD dielectric films for M(O)EMS applications

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  1. Tez No: 727481
  2. Yazar: EGEMEN KEÇECİ
  3. Danışmanlar: DR. MİCHAł JóZWİK
  4. Tez Türü: Yüksek Lisans
  5. Konular: Mekatronik Mühendisliği, Mechatronics Engineering
  6. Anahtar Kelimeler: Belirtilmemiş.
  7. Yıl: 2019
  8. Dil: İngilizce
  9. Üniversite: Warsaw Unıversıty Of Technology
  10. Enstitü: Yurtdışı Enstitü
  11. Ana Bilim Dalı: Belirtilmemiş.
  12. Bilim Dalı: Belirtilmemiş.
  13. Sayfa Sayısı: Belirtilmemiş.

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Özet (Çeviri)

The thesis is devoted to the technology of dielectric films fabricated by means of Plasma Enhanced Chemical Vapor Deposition (PECVD) process for the applications in M(O)EMS devices. Technological fabrication process of exemplary M(O)EMS, here represented by cantilever. Optimization of PECVD dielectric film is proposed. Introduction contain the literature search. It begins with M(O)EMS technology's past and future. Essentials of fabrication are briefly explained. Properties of silicon and silicon compounds are presented. Finally, characterization methods of MEMS products are depicted. Laboratory work is divided in two parts. In the first part of the work, the aim is to optimize the fabrication of thin film dielectric films (e.g., silicon nitride – SiNx). We require to have the control of the thickness, stoichiometry (refractive index) and level of internal stress of the dielectric material by using appropriate PECVD process' parameters. We need to investigate the influence of process' parameters onto electrophysical properties of obtained SiNx films and try to find the correlations in order to get set of process' parameters to obtain appropriate properties of dielectric film. Taguchi's method was used for optimization of deposition. Thickness and refractive index of films are measured by spectroscopic ellipsometry. At the end of the first part the design of SiNx cantilever fabrication process was proposed, however due to technical problems in the clean room, test structures cannot be fabricated. For this reason, objects with closest specification fabricated in the past were used as test structures. The aim of the second part of the work is characterization of free-standing MEMS structures. Fabricated silicon cantilever with a dielectric layer of SiOxNy deposited by PECVD is investigated by laser interferometry. Chapter 4 presents the principles of interferometry and Twyman-Green interferometer setup that was used in this work. As cantilever was tested in static and dynamic mode, stroboscopic interferometry and time average interferometry are elucidated. The results of characterization are used for evaluation of structure's mechanical performance and as feedback data to optimization of fabrication process. Additionally, numerical models were analyzed to understand the influence of residual stress in deposited layer on static deflection and its resonance frequencies. Static analysis provided value of residual stress equal 370MPa. Modal analysis showed that effect of residual stress, for this geometrical configuration of cantilever, isn't significant on frequency.

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