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TlBi(Se1-xSx)2 kristalinin iletkenlik özellikleri

The conductivity properties of TlBi(Se1-xSx)2 crystal

  1. Tez No: 183188
  2. Yazar: SEDAT BALLIKAYA
  3. Danışmanlar: PROF.DR. EMİNE RIZAOĞLU
  4. Tez Türü: Yüksek Lisans
  5. Konular: Fizik ve Fizik Mühendisliği, Physics and Physics Engineering
  6. Anahtar Kelimeler: Belirtilmemiş.
  7. Yıl: 2006
  8. Dil: Türkçe
  9. Üniversite: İstanbul Üniversitesi
  10. Enstitü: Fen Bilimleri Enstitüsü
  11. Ana Bilim Dalı: Genel Fizik Ana Bilim Dalı
  12. Bilim Dalı: Belirtilmemiş.
  13. Sayfa Sayısı: 47

Özet

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Özet (Çeviri)

For the present fast progress of technology the use of semiconductors in electronicindustry has played an impotrant role. The interesting physical properties like highconductivity, thermoelectric power, photosensitivity of layered single crystals, such asTlBiX2 (X = Se, S), have made possible their use in the production of photo-cells,thermo-electric equipments, opto-acoustic detectors, IR detectors and circuit elements.The physical properties of these materials with such a wide application field havearoused much interest in these materials.In this work, we tried to put forth the characteristic behavior of TlBi(Se1−xSx)2 crystal inthe high temperature range (293-413 K range) by studying the perpendicularconductivity to the growth axis and the thermoelectric properties depending on xconcentration (mole fraction of S).

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