Fabrication and characterisation of InP and GaAs based optoelectronic components
Başlık çevirisi mevcut değil.
- Tez No: 400342
- Danışmanlar: DR. RICHARD PENTY
- Tez Türü: Doktora
- Konular: Elektrik ve Elektronik Mühendisliği, Electrical and Electronics Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 2000
- Dil: İngilizce
- Üniversite: Unıversıty Of Brıstol
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Belirtilmemiş.
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: Belirtilmemiş.
Özet
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Özet (Çeviri)
The work presented in this thesis is concerned with smooth and anisotropic etching ofInP-based devices. Also included in this thesis is the fabrication and characterisationof Q-switched InGaAs/GaAs diode lasers and optical InGaAsP/InP space switches.The first introductory chapter highlights potential applications of picosecond pulsedsemiconductor lasers and the physics fundamental to pulse generation in diode lasers.This introduction continues in Chapter 2 where a range of ultrashort pulse generationtechniques are reviewed. State of the art approaches for CW, gain-switched, modelockedand Q-switched semiconductor lasers are outlined, indicating typical achievablepulsewidths and, upper limits to pulse powers and repetition rates.Chapters 3 and 4 investigate chemically assisted ion beam (CAIBE) and reactive ionetching (RIE) of InP respectively. Chapter 3 details a comparison of IBE with CAIBEetching by varying acceleration voltage, discharge current and ion incidence angle.CAIBE of InP using a mixture of Ar/H2 gases is demonstrated using a titanium maskfor the first time. The etching experiments revealed that very smooth and anisotropicmorphologies can be obtained in CAIBE mode. Chapter 4 begins by investigatingharmful contaminants in the RIE chamber and polymer distribution on the etchedstructures by using Focused Ion Beam etching coupled with Secondary Ion MassSpectroscopy (FIB-SIMS). Then, lift-off and dry-etch pattern transfer techniques areexamined to show their effects on the surface, sidewall and mask morphologies.Anisotropic and very smooth etches observed at 20/40sccm (CH4/H2) gas mixtures and<1.5mTorr base pressure are reported.Chapters 5 and 6 are concerned with the characterisation of InGaAsP/InP andInGaAs/GaAs material systems, and the experimental investigation of Q-switchedInGaAs/GaAs laser diodes respectively. In Chapter 5, dry etching (RIE and CAIBE)and wet etching techniques are used to carry out the fabrication of ridge waveguideInGaAsP/InP semiconductor lasers. Chapter 6 reports, for the first time, the use oftapered waveguide structures in passively Q-switched InGaAs multicontact diodelasers (characterised in Chapter 5) to allow enhanced pulse powers. Optical pulseswith powers>700mW (a pulse energy of 33pJ) and pulsewidths less than 46ps wereachieved from a Q-switched 2 QW triple-section double-tapered p-doped ?bow-tie?laser diode in a single spatial mode. This chapter also describes the successfulfabrication and Q-switched operation of a double-section tapered InGaAs laser diode.The fabricated device generated optical pulse powers of up to 1.53W (a pulse energyof 63pJ) with a duration of 41ps and separately down to 29ps in a quality single-lobedfar field of 4o fwhm.Finally Chapter 7 presents the fabrication of a 4x4 compact and monolithic spaceswitch, which operates in the 1.5?m wavelength region and was grown using theInP/InGaAs/InGaAsP material system. It also describes the experimental measurementand assessment of the fabricated devices. Results showed that the devices operatedwith crosstalk levels less than 52dB, switching times of <1.5ns, high extinction ratiosof >50dB, and occupy 1x1mm2 of an InP wafer. The device fabricated is the smallest4x4 space switch reported in the literature.Chapter 8 concludes with a summary of the results discussed in this thesis andsuggestions for future work.
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