Fabrication and characterisation of InP and GaAs based optoelectronic components
Başlık çevirisi mevcut değil.
- Tez No: 400342
- Danışmanlar: DR. RICHARD PENTY
- Tez Türü: Doktora
- Konular: Elektrik ve Elektronik Mühendisliği, Electrical and Electronics Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 2000
- Dil: İngilizce
- Üniversite: University of Bristol
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Belirtilmemiş.
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: 199
Özet
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Özet (Çeviri)
The work presented in this thesis is concerned with smooth and anisotropic etching ofInP-based devices. Also included in this thesis is the fabrication and characterisationof Q-switched InGaAs/GaAs diode lasers and optical InGaAsP/InP space switches.The first introductory chapter highlights potential applications of picosecond pulsedsemiconductor lasers and the physics fundamental to pulse generation in diode lasers.This introduction continues in Chapter 2 where a range of ultrashort pulse generationtechniques are reviewed. State of the art approaches for CW, gain-switched, modelockedand Q-switched semiconductor lasers are outlined, indicating typical achievablepulsewidths and, upper limits to pulse powers and repetition rates.Chapters 3 and 4 investigate chemically assisted ion beam (CAIBE) and reactive ionetching (RIE) of InP respectively. Chapter 3 details a comparison of IBE with CAIBEetching by varying acceleration voltage, discharge current and ion incidence angle.CAIBE of InP using a mixture of Ar/H2 gases is demonstrated using a titanium maskfor the first time. The etching experiments revealed that very smooth and anisotropicmorphologies can be obtained in CAIBE mode. Chapter 4 begins by investigatingharmful contaminants in the RIE chamber and polymer distribution on the etchedstructures by using Focused Ion Beam etching coupled with Secondary Ion MassSpectroscopy (FIB-SIMS). Then, lift-off and dry-etch pattern transfer techniques areexamined to show their effects on the surface, sidewall and mask morphologies.Anisotropic and very smooth etches observed at 20/40sccm (CH4/H2) gas mixtures and700mW (a pulse energy of 33pJ) and pulsewidths less than 46ps wereachieved from a Q-switched 2 QW triple-section double-tapered p-doped ?bow-tie?laser diode in a single spatial mode. This chapter also describes the successfulfabrication and Q-switched operation of a double-section tapered InGaAs laser diode.The fabricated device generated optical pulse powers of up to 1.53W (a pulse energyof 63pJ) with a duration of 41ps and separately down to 29ps in a quality single-lobedfar field of 4o fwhm.Finally Chapter 7 presents the fabrication of a 4x4 compact and monolithic spaceswitch, which operates in the 1.5?m wavelength region and was grown using theInP/InGaAs/InGaAsP material system. It also describes the experimental measurementand assessment of the fabricated devices. Results showed that the devices operatedwith crosstalk levels less than 52dB, switching times of 50dB, and occupy 1x1mm2 of an InP wafer. The device fabricated is the smallest4x4 space switch reported in the literature.Chapter 8 concludes with a summary of the results discussed in this thesis andsuggestions for future work.
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