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Thermoelectric properties of Si-based two dimensional structures

Başlık çevirisi mevcut değil.

  1. Tez No: 400669
  2. Yazar: SEDAT AĞAN
  3. Danışmanlar: PROF. T. E. WHALL, PROF. E. H. C. PARKER
  4. Tez Türü: Doktora
  5. Konular: Fizik ve Fizik Mühendisliği, Physics and Physics Engineering
  6. Anahtar Kelimeler: Belirtilmemiş.
  7. Yıl: 2000
  8. Dil: İngilizce
  9. Üniversite: University of Warwick
  10. Enstitü: Yurtdışı Enstitü
  11. Ana Bilim Dalı: Fizik Ana Bilim Dalı
  12. Bilim Dalı: Belirtilmemiş.
  13. Sayfa Sayısı: 217

Özet

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Özet (Çeviri)

This thesis is a report on experimental investigations of electrical and thermal properties of Si/Sii-xGex/Si normal and inverted modulation doped structures and delta doped Si layers grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi two dimensional hole gas (2DHG) near the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Sii^Ge^/Si quantum well, respectively. Other types of samples measured were 8 -doped Si (2DHG) and 5 -doped Si (2DEG) structures. Low temperature magnetotransport measurements (down to 0.3 K and at the magnetic field up to 12 T in strength) were carried out on one inverted 2DHG structure. The hole effective mass was extracted from the temperature dependence of Shubnikov-de Haas oscillations. The thesis mainly presents experimental and theoretical results of zero magnetic field thermoelectric power (thermopower) for two dimensional hole gas and electron gas samples in the temperature range 1.5 - 300 K. The results correspond well with Cantrell-Butcher phonon drag thermopower theory. The temperature dependence of the thermopower is explained both in terms of the effeects of phonon drag and the enhancement of electron-phonon interaction. Another contribution to the thermopower is the diffusion thermopower at low temperatures. The diffusion thermopower has been obtained experimentally for temperatures varying between 0.5 K and 1.6 K. The thermal conductivity was measured by applying a temperature gradient through the samples. The measured values of the thermal conductivity corresponded with T3 temperature dependence law at low temperatures due to the boundary conditions. The phonon mean free paths were calculated from the thermal conductivity data and were found to be in agreement with Casimir length at low temperatures.

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