Characterization of chemically deposited intermediate bufferlayers for cu2znsn(sse)4 solar cells
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- Tez No: 725184
- Danışmanlar: DR. MARE ALTOSAAR
- Tez Türü: Yüksek Lisans
- Konular: Metalurji Mühendisliği, Metallurgical Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 2015
- Dil: İngilizce
- Üniversite: Tallinn University of Technology
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Belirtilmemiş.
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: 42
Özet
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Özet (Çeviri)
Cu2ZnSnS4 and Cu2ZnSnSe4 (CZTS) quaternary absorber materials are promising compounds for future solar cells. Properties of those absorber materials such as non-toxicity, earthly abundance of corresponding elements and low cost preparation technology make them more attractive. Promoting solar cell efficiency has been studied until today with different absorber and buffer materials, but depositing an intermediate ZnSnS3 buffer layer between absorber layer and buffer layer has not been studied. The purpose of this thesis is to study and apply an intermediate buffer layer, which increases efficiency and avoids recombination of holes and electrons at the surface of Cu2ZnSnS4 solar cells. Na2SnS3 solutions [3Na2S + SnCl4 →Na2SnS3 +4NaCl] were chemically deposited on nonconductive glass substrates by adding different amounts of Zn(O2CCH3)2. After deposition obtained deposits were dried in an oven at 55°C and ZnSnS3 powders were gained. Those ZnSnS3 powders and glass substrates covered with ZnSnS3 were investigated before all processes. Then powders were annealed in dynamic vacuum at 250°C, 350°C, 400°C, 500°C for 5 or 10 min. According to the amount of Zn, Sn and S, the colour of powders was seen differently as orange, yellowish or brownish. Each process was analysed by Raman spectroscopy, energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). For analysing the influence of the intermediate buffer layer on conduction band offset (CBO), valence band offset (VBO) and heterojunction band alignment, ZnSnS3 [Na2SnS3 + Zn(Ac)2 → ZnSnS3 (solid)+ 2NaAc] was deposited on Cu2ZnSnS4 absorber layers of solar cells. Raman spectra of the powders showed that annealing temperature has no influence to chemical composition of ZnSnS3 powders apart from changing colour of the powders. Scanning electron microscope (SEM) results revealed that in some samples there was a small amount of oxygen. In many different particles Zn:Sn:S ratios were 1:1:3, but not for all the particles. Glass substrates were investigated by SEM and seen porous structure. Deposited layer was not well connected with the surface. First used XRD machine results were not clear to decide about the samples, then a more sensitive XRD machine was used for detecting noncrystalline structure. EDS/EDX results showed carbon and oxygen alongside with Zn, Sn and S. All results revealed that, pH value and annealing temperature changes are not more effective features for such intermediate buffer layer. Znrich samples gave the best results compared to others in these experiments. Thus, Zn-rich solutions increase solar cell efficiency better than Sn-rich and according to the results, solar cell efficiency showed dependence on the ratios of Zn:Sn:S elements in prepared compounds and on deposition times.
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